发明名称 |
Triple well structure |
摘要 |
A triple well structure for an embedded dynamic random access memory uses an ion implantation performed on a portion of the first conductive type substrate between a second conductive type source and a second conductive type deep well. A first conductive type block region is formed between the second conductive type source and the second conductive type deep well.
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申请公布号 |
US6111283(A) |
申请公布日期 |
2000.08.29 |
申请号 |
US19990241524 |
申请日期 |
1999.02.01 |
申请人 |
UNITED SEMICONDUCTOR CORP. |
发明人 |
YANG, JOHNNY;HUANG, HSIU-WEN |
分类号 |
H01L21/8234;H01L21/8242;H01L27/108;(IPC1-7):H01L27/108;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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