Synchronous burst nonvolatile semiconductor memory

摘要

A synchronous semiconductor burst nonvolatile semiconductor memory includes first and second address counter circuits and a counter selection circuit in order to output an address signal to a first latch circuit for storing therein data from a memory cell. Either the first address counter circuit or the second address counter circuit is alternately selected by the counter selection circuit in response to a burst control signal. According to the invention, either the first address counter circuit or the second address counter circuit is always selected, and a burst address signal is outputted to the latch circuit on the basis of an externally supplied address signal (first signal of the burst address signal) before the burst control signal is generated.