| 发明名称 |
Low resistive tantalum thin film structure and method for forming the same |
| 摘要 |
A method for forming a lamination structure of a tantalum nitride film and a tantalum thin film free of nitrogen overlying the tantalum nitride film, which have reduced resistivities, wherein a gas pressure during sputtering for growing the tantalum nitride film is limited to a predetermined value not more than about 0.5 pa so that the tantalum nitride film has a hexagonal crystal structure and the tantalum thin film free of nitrogen has a BCC structure with lattice spacing close to that of the tantalum nitride film hexagonal crystal structure.
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| 申请公布号 |
US6110598(A) |
申请公布日期 |
2000.08.29 |
| 申请号 |
US19980178534 |
申请日期 |
1998.10.26 |
| 申请人 |
NEC CORPORATION;HITACHI METALS, LTD. |
发明人 |
MAEDA, AKITOSHI;MURATA, HIDEO;HIRAKAWA, EIJI |
| 分类号 |
G02F1/136;C23C14/06;C23C14/18;C23C14/34;G02F1/1343;H01B5/14;H01B13/00;H01L21/00;H01L21/02;H01L21/28;H01L21/285;H01L21/316;H01L21/3205;H01L21/336;H01L21/768;H01L23/52;(IPC1-7):B32B9/00 |
主分类号 |
G02F1/136 |
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