发明名称 |
Plasma processing method and plasma processing apparatus |
摘要 |
A plasma processing method in which a high-frequency power is supplied to a processing chamber in which an object to be processed is mounted, thereby producing a plasma in the processing chamber, and the object is processed in an atmosphere of the plasma, wherein the high-frequency power is subjected to modulation by a low-frequency power. In one embodiment a plasma is produced in a processing chamber by using an electric power with a direction of current changed with passing of time, and the object to be processed is processed in an atmosphere of the plasma, wherein a power having a basic frequency is subjected to frequency modulation with a frequency equal to n-times (n=an integer) the basic frequency. In a plasma processing apparatus of the invention, while a process gas is supplied to a processing chamber via a first gas introducing hole formed in an electrode, an object to be processed, which is held on an opposed electrode, is subjected to plasma processing. There is provided a resistance applying [means for applying] apply resistance to the process gas flowing to the processing chamber via the gas introducing hole from the gas introducing means such that a plasma discharge is prevented from occurring in the gas introducing means when a process pressure in the processing chamber is set at 0.5 Torr or less.
|
申请公布号 |
US6110287(A) |
申请公布日期 |
2000.08.29 |
申请号 |
US19970843129 |
申请日期 |
1997.04.28 |
申请人 |
TOKYO ELECTRON LIMITED;TOKYO ELECTRON YAMANASHI LIMITED |
发明人 |
ARAI, IZUMI;TAHARA, YOSHIFUMI;NISHIKAWA, HIROSHI;MITANO, YOSHINOBU;IIMURO, SHUNICHI;FUKASAWA, KAZUO;MIURA, YUTAKA;HOSODA, SHOZO |
分类号 |
C23C16/509;H01J37/32;H01L21/00;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/509 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|