| 摘要 |
PROBLEM TO BE SOLVED: To reduce a possibility of particle generation on a gate oxide film by heat processing in ammonium gas circumstance and heat processing in oxygen circumstance after machining of the gate oxide film and a gate electrode. SOLUTION: A gate oxide film 2 is formed on a P type semiconductor substrate 1 and a polycrystalline silicon film 3 to become a gate electrode 4 is piled thereon. The gate electrode 4 is formed by photolithography and etching of the polycrystalline silicon film 3 on the gate oxide film 2. Next a region 5 where nitrogen in the ammonia gate is defused is formed on the exposed gate oxide film 2 and in the gate oxide film 2 which is near both terminals under the gate electrode 4. Also the surface of the gate electrode 4 is oxidized by hear processing in the circumstance including oxygen. Next in case of an NMOS type, an N type element such as arsenic is implanted into the gate electrode 4 and into an N type source 7 and an N type drain 6 regions by ion infusion.
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