| 发明名称 |
Ultra-low temperature Al fill for sub-0.25 mu m generation of ICs using an Al-Ge-Cu alloy |
| 摘要 |
An aluminum fill process for sub-0.25 mu m technology integrated circuits that has a reflow temperature less than 400 DEG C. that has low alloy resistivity and excellent electromigration characteristics. The aluminum allow is composed of Al-1% Ge-1% Cu.
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| 申请公布号 |
US6110829(A) |
申请公布日期 |
2000.08.29 |
| 申请号 |
US19970956343 |
申请日期 |
1997.10.23 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
BESSER, PAUL RAYMOND;CHEUNG, ROBIN W.;MORALES, GUARIONEX |
| 分类号 |
H01L21/768;H01L23/532;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/768 |
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