发明名称 Lewis base adducts of anhydrous mononuclear tris( beta -diketonate) bismuth compositions for deposition of bismuth-containing films, and method of making the same
摘要 Anhydrous mononuclear Lewis base adducted tris( beta -diketonato) bismuth complexes, useful as precursors for chemical vapor deposition of bismuth, for producing Bi-containing films of significantly improved stoichiometry, morphology and functional character, as compared to films obtained from dinuclear tris( beta -diketonato) bismuth complexes of the prior art.
申请公布号 US6111124(A) 申请公布日期 2000.08.29
申请号 US19980224614 申请日期 1998.12.31
申请人 ADVANCED TECHNOLOGY MATERIALS, INC. 发明人 BAUM, THOMAS H.;DUBOIS, RAYMOND H.
分类号 C07C49/92;C07F9/94;C23C16/18;C23C16/40;H01L21/316;(IPC1-7):C07F9/94 主分类号 C07C49/92
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