| 摘要 |
PROBLEM TO BE SOLVED: To make functioning of switching and memory by each current density at operating voltages after applying forward and reverse pulse voltages having different hysteresis properties each other caused by the condition where a standard operating voltage between a first and a second electrode is biased. SOLUTION: A first and a second electrode A and B are operated to on or off and are made functioning of switching by impressing a forward and a reverse pulse voltage by Schottky connection between A and B under the condition of a bias of a standard operating voltage (0.5 V), it means the condition of a diode operating voltage being set at 0.5 V, being applied to the second electrode (metallic) B. Each current density at 0.5 V is different from each other by setting the diode operating voltage at 0.5 V and applying forward and reverse pulse voltages by Schottky connection under the current density condition. A memory is utilized by using this difference in current density large or small. |
