| 摘要 |
<p>PROBLEM TO BE SOLVED: To manufacture a liquid crystal display of large area, by including a semiconductor element which solid-fuses or couples with Al and forms alloy and prevents the occurrence of hillock, etc., and a metallic element which segregates in the crystal grain boundary of Al alloy and prevents the occurrence of hillock, etc., in a conductive film which constitutes a gate electrode. SOLUTION: A thin base insulating film, a polysilicon layer to serve as the semiconductor part of a film transistor, and a gate insulating film are made in order on a translucent substrate, and a gate electrode is made on its topside. Then, the conductive film constituting the gate electrode contains a semiconductor element which prevents the occurrence of hillock or voids, forming alloy by solid-fusing or coupling Al and one out of C, Si, P, Zn, Ga, Ge, etc., and a metallic element which prevents the occurrence of hillock or voids as one out of Mg and others from Sc in group 3a in the fourth period on the long periodic table to copper in group 1b, segregating in the crystal grain boundary of Al alloy.</p> |
