发明名称 |
METHOD OF CUTTING SILICON SINGLE CRYSTALS |
摘要 |
technology of manufacturing silicon substrate; applicable in operations of cutting of silicon single crystals into wafers in electronic industry. SUBSTANCE: method includes supply to cutting zone of lubricant-coolant symmetrically to point of touching of single crystal by edge of cutting wheel in direction at angle of 70-80 deg to tangent of point of contact of lubricant-coolant jet with cutting wheel edge from lubricant-coolant sources with diameter of outlet hole d = 1.5-3 at distance of (2.5-4)d from point of touching of jet with edge and at distance of (1.1-1.4)D from axis of lubricant-coolant sources to point of touching of single crystals by cutting wheel edge at beginning of cutting, where D is diameter of single crystal. Flow rate of lubricant-coolant is taken equal to liquid quantity transported per time unit in intergranular space of cutting wheel edge in compliance with formula given in the invention description. EFFECT: higher efficiency. 1 tbl
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申请公布号 |
RU2155131(C2) |
申请公布日期 |
2000.08.27 |
申请号 |
RU19980117036 |
申请日期 |
1998.09.11 |
申请人 |
ITET |
发明人 |
KHUDOBIN L.V.;KRUPENNIKOV O.G. |
分类号 |
B28D5/00;(IPC1-7):B28D5/00 |
主分类号 |
B28D5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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