DRY ETCHING APPARATUS AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A magnetic field plasma generation apparatus is provided which can make a stable and uniform discharge in a low pressure and a low ion current density, and where ion current density and the distribution of etching rate in a plane are uniform. And also a method is provided for fabricating a semiconductor device using the plasma generation apparatus. CONSTITUTION: In a dry etching, a high anisotropy and a low gate breakdown are accomplished. Plasma is generated by ECR(Electron Cyclotron. Resonance) resonance of an electromagnetic wave and a magnetic field generated by that UHF power is supplied to a micro strip line(4) installed in a surface in the side of atmosphere of a dielectric(2) separating the inside and outside of vacuum. And a conductive film is dry-etched by the plasma. Therefore, a stable and uniform plasma can be generated.