METHOD FOR MANUFACTURING THIN FILM SEMICONDUCTOR DEVICE AND APPARATUS FOR RADIATING LASER BEAM

摘要

PURPOSE: A method for manufacturing a thin film semiconductor device is provided to control a dispersion while not increasing a particle diameter of a crystal by controlling the temperature of a substrate. CONSTITUTION: A method for manufacturing a thin film semiconductor device comprises the steps of: forming a semiconductor thin film including an amorphous material or a polycrystalline material of a relatively small particle diameter, on a substrate; radiating energy beam to the semiconductor thin film to transform the amorphous material or the polycrystalline material of a relatively small particle diameter on the substrate to a polycrystalline having a relatively large particle diameter; and integrating/forming a thin film transistor in a predetermined region by using the semiconductor thin film to transform the polycrystalline material to an active layer. The energy beam supplied after controlling a time and an area in a predetermined level is radiated into the region more than once. The substrate is not exposed in the step for forming the thin film, in the radiation step, and in the step of transferring between the two steps.