发明名称 |
METAL OXIDE SEMICONDUCTOR CAPACITOR USING DUMMY PHOTO ETCHING PATTERN |
摘要 |
PURPOSE: A metal oxide semiconductor capacitor using dummy photo etching pattern provides a capacitor form of a dynamic random access memory array, CONSTITUTION: A semiconductor construction comprises an active array of a first construction element having a first manufacturing precision, and includes boundary region surroundings the active array-the boundary region has a second construction element having a second manufacturing precision that lower than the first manufacturing precision-the second construction element are insulated from the active array and includes a passive device for improve the action of the active array.
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申请公布号 |
KR20000052484(A) |
申请公布日期 |
2000.08.25 |
申请号 |
KR19990057985 |
申请日期 |
1999.12.15 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
SHOU ROUIS S.;NATICE DEMITRI |
分类号 |
H01L21/334;H01L21/8242;H01L27/108;H01L29/94;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/334 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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