发明名称 METAL OXIDE SEMICONDUCTOR CAPACITOR USING DUMMY PHOTO ETCHING PATTERN
摘要 PURPOSE: A metal oxide semiconductor capacitor using dummy photo etching pattern provides a capacitor form of a dynamic random access memory array, CONSTITUTION: A semiconductor construction comprises an active array of a first construction element having a first manufacturing precision, and includes boundary region surroundings the active array-the boundary region has a second construction element having a second manufacturing precision that lower than the first manufacturing precision-the second construction element are insulated from the active array and includes a passive device for improve the action of the active array.
申请公布号 KR20000052484(A) 申请公布日期 2000.08.25
申请号 KR19990057985 申请日期 1999.12.15
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 SHOU ROUIS S.;NATICE DEMITRI
分类号 H01L21/334;H01L21/8242;H01L27/108;H01L29/94;(IPC1-7):H01L27/108 主分类号 H01L21/334
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