| 摘要 |
PURPOSE: A vertical cavity surface emitting laser array and a fabrication method are provided for a monolithic array of a VCSEL device emitting light on a multiple wavelength, array appliable a gain peak of each device of array comfortable with a cavity mode, and multiple same array on a same wafer. CONSTITUTION: A vertical cavity surface emitting laser array comprises a uniform thickness layer(210) formed on a semiconductor substrate(200). The substrate(200) is III-V family semiconductor. The uniform thickness layer(210) acting as lower mirror to each device in the array. Uniform thickness of a second layer(215) is formed on the lower mirror(210). The oxide pads(220) are used for the control of arrangement, thickness, and composition of the III-V family semiconductor materials. Devices(236,237,238) are formed on a substrate by etching. The cavity region of the devices(236,237,238) is provided by layer(215, 225, 230) and mirror layer(210, 235) portion. A layer(225) is an active region including a proton well construction of the device. The change of composition and the thickness of layer(225) among the device are provided by forming the layer using SAG.
|
