发明名称 |
METHOD FOR MANUFACTURING METAL-OXIDE-METAL CAPACITOR |
摘要 |
PURPOSE: A method for manufacturing metal-oxide-metal(MOM) capacitor is provided to eliminate a defect on a surface of a metal plug by preventing a stack of metal layers of a lower metal electrode affecting reliability and yield. CONSTITUTION: A method for manufacturing metal-oxide-metal(MOM) capacitor comprises the steps of: forming a dielectric layer adjacent to a substrate; forming a metal plug of the dielectric layer with the metal plug having at least one of an undesired topographical defect in an uppermost surface portion; and forming a lower metal electrode on the dielectric layer and the metal plug in which the lower metal electrode includes a stack of a metal layer, a lower metal nitric layer, an aluminum layer, and an upper metal nitric layer.
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申请公布号 |
KR20000053455(A) |
申请公布日期 |
2000.08.25 |
申请号 |
KR20000001149 |
申请日期 |
2000.01.11 |
申请人 |
LUCENT TECHNOLOGIES INC. |
发明人 |
HARRIS, EDWARD B.;MEOCHEONTEUSEILRISWIMANSIHI;YANWIPAENG, WINSTON |
分类号 |
H01L27/108;H01L21/02;H01L21/285;H01L21/8242;(IPC1-7):H01L21/824 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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