发明名称 METHOD FOR MANUFACTURING METAL-OXIDE-METAL CAPACITOR
摘要 PURPOSE: A method for manufacturing metal-oxide-metal(MOM) capacitor is provided to eliminate a defect on a surface of a metal plug by preventing a stack of metal layers of a lower metal electrode affecting reliability and yield. CONSTITUTION: A method for manufacturing metal-oxide-metal(MOM) capacitor comprises the steps of: forming a dielectric layer adjacent to a substrate; forming a metal plug of the dielectric layer with the metal plug having at least one of an undesired topographical defect in an uppermost surface portion; and forming a lower metal electrode on the dielectric layer and the metal plug in which the lower metal electrode includes a stack of a metal layer, a lower metal nitric layer, an aluminum layer, and an upper metal nitric layer.
申请公布号 KR20000053455(A) 申请公布日期 2000.08.25
申请号 KR20000001149 申请日期 2000.01.11
申请人 LUCENT TECHNOLOGIES INC. 发明人 HARRIS, EDWARD B.;MEOCHEONTEUSEILRISWIMANSIHI;YANWIPAENG, WINSTON
分类号 H01L27/108;H01L21/02;H01L21/285;H01L21/8242;(IPC1-7):H01L21/824 主分类号 H01L27/108
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