SENSOR DEVICE

摘要

PURPOSE: A sensor device is provided to reduce the size of the sensor device which includes coupled non-volatile memory by way of adopting field effect transistor inside the sensor. CONSTITUTION: A sensor device according to the present invention is made of a type of a filed effect transistor(10) which is very sensitive to the physical amount to be detected. The gate electrode(20) of the field effect transistor(10) is operated as a floating gate. The field effect transistor is a photosensitive field effect transistor. The charge stored in the floating gate of the field effect transistor is changed based on the physical amount detected. The floating gate of the field effect transistor is sensitive to the pressure or the acceleration, and the floating gate is further replaceable. And the floating gate is operated based on a tunneling effect.