HYBRID LIGHT EMITTING DEVICE, SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor light emitting device is provided to improve a durability of static electricity regarding a high voltage by using a sub-mount element as a static electricity protection element. CONSTITUTION: A method for manufacturing a semiconductor light emitting device comprises the steps of: forming a stacked element including a first semiconductor layer of a first conductivity and a second semiconductor layer of a second conductivity on a substrate having a light penetration, and forming an electrode on the stacked element to make the light emitting device; forming a sub-mount element having an opposite electrode in a position opposite to the electrode of the light emitting device on a main surface; forming a micro bump on the electrode and the opposite electrode; having the stacked element and the main surface of the opposite electrode face each other and maintaining the light emitting device on the sub-mount element, so that the electrode of the light emitting device is electrically connected to the opposite electrode through the micro bump; and applying a wavelength transforming resin material including either one of a fluorescent material or a filter material to coat the light emitting device while having the main surface of the sub-mount element as a maintaining part of the wavelength transforming resin material.