SEMICONDUCTOR CRYSTALLINE, IT'S FABRICATION METHOD AND SEMICONDUCTOR DEVICE

摘要

PURPOSE: Semiconductor crystalline, it's process and semiconductor device is provided to depress the deterioration of the crystalline structure followed by heat treatment on a SiGeC layer; CONSTITUTION: Semiconductor crystalline, it's process and semiconductor device is comprising; The SiGeC mixed crystalline(Si 1-x Gex / Si1-yCy short periodic superlattice) is stacked alternately as 200 periodically the Si0.68Ge0.32 layer(102) and the Si0.98C0.04 layer(103) on Si substrate(101). Each layer(102,103) has the 3 atom layers. The formation of SiGeC mixed crystalline are performed the 3 atom layers of Si 0.68 Ge 0.32 layer(102) and the Si 0.98 C 0.04 layer(103) on Si(001) substrate(101) by UHV-CVD method with epitaxial grown alternatively.