发明名称 POLISHING PAD AND PROCESS FOR FORMING SAME
摘要 <p>A process for joining together a first polishing pad (20) with a second polishing pad (22) form a larger pad (10) for a machine that performs chemical-mechanical polishing of silicon wafers. The process includes laying a first polishing pad (20) on a surface and laying a second pad (22) on the surface so that a portion of the second pad (22) overlies a portion of the first pad (20), creating an overlap region (36). The first and the second pads (20, 22) in the overlap region (36) are cut through to form a first cut edge (44) on the first pad (20) and a second cut edge (46) on the second pad (22), the first and the second cut edge (44, 46) edges having shapes which are complementary. The first and the second cut edges (44, 46) are brought into engagement, and the first pad (20) is joined to the second pad (22) at the first and second cut edges (44, 46).</p>
申请公布号 WO2000048788(A1) 申请公布日期 2000.08.24
申请号 US2000002612 申请日期 2000.02.02
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