| 摘要 |
<p>A semiconductor laser (200) comprises a semiconductor substrate (100), a pair of cladding layers (110, 150) formed on the substrate, a pair of undoped SCH layers (120, 140) disposed between the cladding layers (110, 150), and an active quantum well layer (130) disposed between the undoped SCH layers (120, 140). The waveguide loss of light output in leaky mode is smaller than the mode gain of the semiconductor laser because the existence of the SCH layers (120, 140) and the adequate film thickness of the cladding layers (110, 150). The laser provides low threshold current and high emission efficiency.</p> |
