| 摘要 |
A diffusion barrier layer (130, 136, 329, 320, 321, 630) in an integrated circuit is located to inhibit undesired diffusion of chemical species from local interconnects (158, 318, 319, 339, 658) into layered superlattice material in a thin film (124, 324, 624) memorycapacitor (128, 328, 600). The diffusion barrier layer comprises iridium oxide. The thinfilm of layered superlattice material is ferroelectric or nonferroelectric, high-dielectric constant material. Preferably, the thin film comprises ferroelectric layered superlattice material. The diffusion barrier layer is located between a local interconnect and the memory capacitor. Preferably, the diffusion barrier layer is in direct contact with the local interconnect. The iridium-oxide diffusion barrier is effective for preventing diffusion of metals, silicon and other chemical species. |
