SELF-ALIGNED SHIELD STRUCTURE FOR REALIZING HIGH FREQUENCY POWER MOSFET DEVICES WITH IMPROVED RELIABILITY

摘要

A high frequency power field effect transistor has a self-aligned gate-drain shield (50) adjacent to the gate (24) and overlying the drain. Fabrication of the structure does not require complex or costly processing and the resulting self-aligned shield structure minimizes increase to input and output capacitances. Hot carrier injection and related shifts are reduced thereby improving reliability of the transistor.