| 摘要 |
<p>A high-power semiconductor device of high cooling performance with decreased external resistance and a method of manufacture thereof are disclosed. A MOSFET (70) comprises a plurality of inner leads connected electrically with surface electrodes of a semiconductor pellet on which a field-effect transistor is formed; connecting parts for connecting the inner leads electrically with the surface electrodes of the semiconductor pellet; a plastic mold (29) enclosing the semiconductor pellet; a plurality of outer leads (37, 38) protruding in parallel from one side of the plastic mold (29); and a header including an extension (28c) that is in contact with the back of the semiconductor pellet (28) and projects from the other sides of the plastic mold (29). The header (28) includes a surface (28b) exposed outside the plastic mold (29), and the outer leads (37, 38) are formed so that the exposed surface (28b) of the header (28) may become substantially at the same level as the connection faces of the outer leads (37, 38).</p> |
