| 摘要 |
The present invention relates to a method for producing a DRAM cell with a trench capacitor. The aim of the invention is to simplify the production method for a DRAM cell, guarantee high effect and obtain high packing density of the DRAM cells. To this end, the storage capacitor (4) of the DRAM cell and the select transistor (3) are manufactured independently from each other. The capacitor is produced in the first zone (6). A second zone (10) is subsequently arranged on the first zone (6) in such a way that the first trench (7) is covered in the first zone (6). In a preferred embodiment, the second zone (10) is arranged on the first zone (6) by means of techniques well known to the person skilled in the art such as direct wafer bonding or smart cut. A clearly defined boundary surface (1) can be created in a simple manner between the first zone (6) and the second zone (10) by said direct wafer bonding method or smart cut method. |
