摘要 |
<p>A lithographic projection apparatus comprising: a radiation system LA, Ex, IN, CO for supplying a projection beam PB of radiation of a first type; a mask table MT for holding a mask MA; a substrate table WT for holding a substrate W; a projection system PL for imaging a portion of the mask MA, irradiated by the projection beam PB, onto a target portion C of the substrate W, whereby the apparatus further comprises: a secondary source for supplying radiation SB of a second type, which can be directed onto the substrate W; control means for patterning the radiation SB of the second type so that it impinges on the substrate W according to a certain pattern, such that the sum of the fluxes of the radiations of the first and second type at substrate level causes an elevation of the substrate temperature which is substantially constant across at least a given area of the substrate W. <IMAGE></p> |