Surface preparation method and semiconductor device

摘要

A surface preparation method and semiconductor device constituted so as to enable the prevention of carrier accumulation resulting from Si acting as a donor, without making the constitution of a semiconductor manufacturing apparatus complex. When forming an epitaxial layer either on the surface of a substrate, or on the surface of a base layer, Si or an Si compound that exists on the surface of a substrate, or on the surface of a base layer, is removed in accordance with a thermal cleaning process that uses an As hydride gas as the cleaning gas.