| 摘要 |
In producing a multilevel interconnection structure, an insulator film is placed on and bonded to interconnecting lines laid on an insulating layer on a semiconductor substrate such that all the spacings between the interconnecting lines are left as vacant spaces. For example, the insulator film is a polyimide film or a silicon oxide film. The vacant spaces serve the purpose of reducing capacitance between adjacent interconnecting lines. After forming contact holes in the insulator film and filling the contact holes with a metal, upper-level interconnecting lines are laid on the insulator film. |
