| 摘要 |
Anisotropic plasma etching of organic polymeric dielectric substrates, using a plasma of oxygen and ammonia, water, methane or hydrogen, is new. Anisotropic plasma etching of an organic polymeric dielectric substrate is carried out using a gas mixture of NH3, H2O, CH4 or H2 and less than 40 vol.% O2. An Independent claim is also included for production of metallic interconnections in a damascene structure of stop layers in an organic polymeric dielectric substrate and a hard mask on the substrate surface, comprising using the above process to form interconnection lines and vias which are then filled with conductive material. Preferred Features: The gas mixture may also contain NOTGREATER 40 (especially NOTGREATER 30) N2. The O2 concentration is 15 to less than 30 vol.% for an O2/NH3 mixture and is ≤ 10 vol.% for an O2/H2O mixture. The gas pressure is 13.3 Pa to 5.5 kPa. The organic polymeric material has a dielectric constant of less than 4, especially ≤ 3. The vias and lines are filled with copper or aluminum and are then planarized by chemical-mechanical polishing. |
