发明名称 |
Wideband linear GaAsFET ternate cascode amplifier |
摘要 |
The present invention incorporates GaAs field effect transistors (GaAsFETs) in a radio frequency (RF) ultra-linear amplifier. The described amplifier circuit is a transformer-coupled single input, signal processing unit incorporating ultra-fast, GaAsFETs in a three active device cascode. This arrangement allows for a higher working voltage to be applied across the three semiconductors rather than a traditional two transistor cascode. The operational bandwidth can process a mixed modulation signal comprised of analog and digital channels.
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申请公布号 |
US6107885(A) |
申请公布日期 |
2000.08.22 |
申请号 |
US19990236175 |
申请日期 |
1999.01.25 |
申请人 |
GENERAL INSTRUMENT CORPORATION |
发明人 |
MIGUELEZ, PHILIP;MENNA, RUDOLPH J. |
分类号 |
H03F3/26;(IPC1-7):H03F3/26 |
主分类号 |
H03F3/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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