发明名称 Impurity doping apparatus
摘要 An impurity doping apparatus for fabricating a liquid crystal display simplifies processes for heating a substrate and doping the substrate with impurities by providing: a substrate supporter on which the substrate is mounted, a first gun disposed above and at a fixed distance from the substrate supporter for supplying a heating gas for heating the substrate, a second gun adjacent to the first gun which dopes the heated with impurity ions, a transferring part for moving the first and second guns to a horizontal or vertical direction, a driver providing the transferring part with a driving force to the horizontal or vertical direction, and a controller controlling an moving operation of the transferring part. The apparatus: improves productivity; causes no heat damage to the substrate, since the process is carried out at low temperature; simplifies the total process by skipping an activating process accompanied by an impurity-ion doping step; and reduces the total volume of the apparatus, as no separate heating or cooling means is required, thereby also decreasing the total cost for the process.
申请公布号 US6106629(A) 申请公布日期 2000.08.22
申请号 US19990434118 申请日期 1999.11.05
申请人 LG. PHILIPS LCD CO., LTD. 发明人 YANG, JOON-YOUNG
分类号 H01L21/26;H01J37/317;H01L21/00;(IPC1-7):H01J37/36 主分类号 H01L21/26
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