| 摘要 |
The present invention provides systems, methods and apparatus for processing of semiconductor wafers. Specifically, embodiments of the present invention include apparatus designed to resist etching and deposition by processing and cleaning gases in a processing chamber. The apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and facilitate cleaning of the processing chamber. In one embodiment of the invention, a heating assembly for heating a semiconductor wafer within a deposition apparatus comprises a pedestal having a substantially planar upper surface for supporting the semiconductor wafer thereon and a heating element disposed therein for heating the wafer to the required temperatures for processing. According to the invention, the pedestal includes a protective layer substantially covering and adhered to the wafer support surface. The material used in the layer is substantially resistant to reactions with and deposition by process gases and cleaning gases at temperatures up to 500 DEG C. The thickness of the protective layer usually ranges from about 2 to 30 mils and preferably between about 5 to 10 mils.
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