| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device of a structure, wherein the switching loss in an electrical circuit is reduced and the reverse recovery breakdown strength of the device is raised. SOLUTION: This semiconductor device is one constituted into a structure, wherein a P-type anode layer 13 is formed in the surface part of an N- layer 12 formed on an N+ cathode layer 11, guard ring layers 14 are formed on the periphery on the outside of this layer 13 separately from the layer 13 and moreover, a channel stopper layer 15 is formed on the peripheral on the outside of the layer 13 separately from the layer 13, an anode electrode 21 is formed on the upper surface of the layer 13, and a cathode electrode 22 is formed under the lower surface of the layer 11. A heavy metal diffused zone 19 is provided in the upper surface of the layer 12, which is positioned between the outer peripheral end of the layer 13 in the layer 12 and the inner peripheral end of the layer 14, platinum is diffused from here, the zone 19 in the layer 12, a heavy metal diffused layer 20 is formed in the layer 12 between the outer peripheral end of the layer 13 and the inner peripheral end of the layer 14, and an irradiation of charged particles takes place toward the layer 12 under the lower part of the layer 13 to exercise a carrier life time control.
|
