发明名称 |
Semiconductor laser and method for producing the same |
摘要 |
A semiconductor laser includes a substrate of a first conductive type, a mesa provided on the substrate and having a multilayered structure including at least a cladding layer of the first conductive type, an active layer and another cladding layer of a second conductive type, a current blocking layer provided on both sides of the mesa, a buried layer of the second conductive type provided on the mesa and the current blocking layer, and a contact layer of the second conductive type provided in a predetermined region on the buried layer. The predetermined region does not include a portion immediately above the mesa.
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申请公布号 |
US6108361(A) |
申请公布日期 |
2000.08.22 |
申请号 |
US19980106892 |
申请日期 |
1998.06.29 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
FUJIHARA, KIYOSHI;MORI, YOSHIHIRO |
分类号 |
H01S5/00;H01S5/02;H01S5/024;H01S5/042;H01S5/22;H01S5/227;H01S5/323;H01S5/343;(IPC1-7):H01S3/19 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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