Method for fabricating a semiconductor device having a tapered contact hole

摘要

A semiconductor device includes: a field oxide layer formed on a semiconductor substrate; a transistor having an active region formed on a semiconductor substrate; an interlayer insulating layer formed on the transistor and the field oxide; and a tapered contact hole exposing the active region adjacent to the field oxide layer, wherein an upper portion of the tapered contact hole is wider than a lower portion thereof so that the field oxide is not etched during the contact hole etching process. A method for fabricating a semiconductor device includes the steps for: forming a field oxide layer on a semiconductor substrate; forming a transistor having an active region on a semiconductor substrate; forming an interlayer insulating layer on the resulting structure; and forming a tapered contact hole exposing the active region adjacent to the field oxide layer, wherein an upper portion of the tapered contact hole is wider than a lower portion thereof so that the field oxide is not etched during the contact hole etching process.