| 摘要 |
Methods of forming tungsten-comprising layers are described. In one implementation, a substrate is provided having a surface over which a tungsten-comprising layer is to be formed. A gas plasma is generated comprising a reactive species, with the substrate not being exposed to the gas plasma. The reactive species from the gas plasma and a source gas comprising tungsten are provided into proximity with the substrate surface and under conditions which are effective to form a tungsten-comprising layer over at least a portion of the surface. In another implementation, a tungsten source gas is provided into a chamber having a substrate positioned therein. A gaseous reactive species formed from a gas plasma is provided into proximity with the substrate within the chamber and under conditions which are effective to form a layer comprising tungsten over at least a portion of the substrate. At least some of the gaseous reactive species is (are) generated by gas plasma at a plasma-generating location which is remote from the substrate. In another implementation, a layer which is predominately tungsten nitride is formed over a substrate surface within a processing chamber. At a processing location which is remote from the substrate surface, a nitrogen-comprising gas is exposed to conditions which are effective to form an activated nitrogen-comprising species from the gas. The substrate surface is exposed to a tungsten-comprising source gas and the activated nitrogen-comprising species within the chamber under conditions effective to form a layer comprising tungsten nitride over at least a portion of the surface.
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