| 摘要 |
PROBLEM TO BE SOLVED: To suppress the occurrence of defective connection in multilayered wiring during simultaneous works of shallow contacts and deep contacts, by forming a film having a high etching rate between an insulating film and wiring on the surfaces of the openings of the deep contacts. SOLUTION: After a film composed of an amorphous CFx film 22, etc., having a high etching rate is formed on first wiring 16, the film 22 is left by dry etching, etc., by only subjecting the lower stage section of a step to resist patterning. Therefore, the etching time can be shortened from the conventional example, because the film 22 having the high etching rate can be worked at a high speed in etching an HDP-SiO film 18 which is formed as an interlayer insulating film. In addition, shallow contacts can be etched without punching through TiN layer. Moreover, deep contacts can be worked without causing opening failures, because the etching sufficiently advances due to the high etching rate of the film 22. |
