| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where parasitic capacitance between a gate terminal and a drain terminal is reduced, the bonding intensity of a gate lead wire to the gate terminal is made to be not less than a prescribed intensity and reliability is improved. SOLUTION: A source terminal 33 and a gate terminal 34 are detached/ installed on the upper side of a semiconductor substrate 24. A drain terminal 25 is installed on a lower side. A mark 35 for estimating the position of the gate terminal 34 is installed in a different position in an equal distance from the gate terminal 34 on the upper side by simultaneously patterning a metallic material for forming terminal in forming the gate terminal 34. |
