发明名称 SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus which can provide a good contact between semiconductor and wiring via an insulating layer. SOLUTION: A semiconductor manufacturing apparatus 40 includes an etching chamber, a heating chamber 43 having a facility for heating a substrate, and a transfer chamber 46 which communicates with the etching chamber and the heating chamber 43. The heating chamber 43 may be provided with an ultraviolet-ray lamp, and the lamp may be provided inside or outside of the chamber 46. The heating chamber 46 may have a means for supplying oxygen(O2) or ozone(O3) gas.
申请公布号 JP2000232077(A) 申请公布日期 2000.08.22
申请号 JP19990032736 申请日期 1999.02.10
申请人 APPLIED MATERIALS INC 发明人 HIROSE MITSURU
分类号 H01L21/302;C23C16/02;H01L21/28;H01L21/285;H01L21/3065;H01L21/768;(IPC1-7):H01L21/285;H01L21/306 主分类号 H01L21/302
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