发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To improve a relief rate of defective parts. SOLUTION: Spare sectors 12a-12h in which spare memory cell columns are arranged respectively are arranged corresponding to sectors 11a-11h in which plural memory cell columns are arranged in parallel. Decoders 13a-13h are connected to the sectors 11a-11h and the spare sectors 12a-12h respectively, and a specific memory cell column in the sectors 11a-11h is specified responding to column address information CA. At the time, memory cell columns in the sectors 11a-11h are replaced by spare memory cells in the spare sectors 12a-12h responding to replacement information held in decoders 11a-11h.
申请公布号 JP2000231795(A) 申请公布日期 2000.08.22
申请号 JP19990030378 申请日期 1999.02.08
申请人 SANYO ELECTRIC CO LTD 发明人 WATANABE MAKOTO;HASHIMOTO KUNIO;ITAGAKI TOSHIHIRO
分类号 G11C11/413;G11C29/00;G11C29/04;(IPC1-7):G11C29/00 主分类号 G11C11/413
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