| 摘要 |
An apparatus and a method of actively controlling the temperature of a surface of a workpiece is disclosed. The apparatus includes a heat exchanger and a temperature controller thermally coupled to a chuck having a support surface to provide for active controlling of the temperature of the support and a surface of a workpiece, such as a semiconductor wafer, placed thereon. In a preferred embodiment, the chuck includes an interior region that forms a portion of the heat exchanger and is connected by an inlet and an outlet to a heat exchange medium source that provides for the recirculation of heat transfer medium through the interior region. In a preferred method of operation, a heat exchanger is provided relative to the wafer support surface to allow heat to be transferred between the heat exchanger and the support surface so as to achieve a predetermined temperature for the support surface and the wafer. After the predetermined temperature of the support surface has been achieved, the wafer is brought into contact with the support surface and the spin dispensing of the process liquid onto the surface of the wafer is performed. The transfer of heat between the heat exchanger and the support surface can be continued or discontinued during the time when the wafer is contacting the support surface.
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