发明名称 |
Micromachine manufacture using gas beam crystallization |
摘要 |
In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is upwardly directed is irradiated with Ne atom currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (1104) is converted to such orientation that the (111) plane is upwardly directed. A masking member (106) is employed as a shielding member to anisotropically etch the substrate (1102) from its bottom surface, thereby forming a V-shaped groove (1112). At this time, the uppermost layer (1104) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diaphragm which is made of a single-crystalline material can be easily manufactured through no junction.
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申请公布号 |
US6106734(A) |
申请公布日期 |
2000.08.22 |
申请号 |
US19970917267 |
申请日期 |
1997.08.25 |
申请人 |
MEGA CHIPS CORPORATION;CRYSTAL DEVICE CORPORATION |
发明人 |
SHINDO, MASAHIRO;KOSAKA, DAISUKE;HIKAWA, TETSUO;TAKATA, AKIRA;UKAI, YUKIHIRO;SAWADA, TAKASHI;ASAKAWA, TOSHIFUMI |
分类号 |
B81B3/00;C23C16/48;C23C16/511;C23C16/56;G01L9/00;G01P15/08;H01H59/00;H01J37/32;H01L27/12;H01L31/0376;H01L31/078;H01L31/18;H02N1/00;(IPC1-7):H01L21/302 |
主分类号 |
B81B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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