| 摘要 |
A semiconductor memory comprises two banks each including a number of memory cells arranged in the form of a matrix having a plurality of rows and a plurality of columns, each of the banks having a plurality of data input/output lines extending in a column direction, so that the data input/output lines can sequentially accessed at a designated row address. The semiconductor memory also comprises a bank judgment circuit receiving an address signal for discriminating a first bank to be firstly accessed of the at least two banks, a row address counter for designating a row address at which the first bank is continuously accessed, and a bank switch circuit for switching access to a second bank to continuously access to the second bank after an access to the most significant column address in the first bank has been finished. Thus, a reading or writing operation is continuously executed for the first bank and the second bank by alternately accessing the first bank and the second bank.
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