| 摘要 |
PROBLEM TO BE SOLVED: To hold variations of characteristic by forming a collector layer, an emitter diffusion layer and a collector diffusion layer in a crystal silicon layer, forming an intrinsic base area between the collector layer and emitter diffusion layer, and providing a base leading wiring connected electrically and directly with the intrinsic base area. SOLUTION: A single crystal silicon layer 3 is formed as an n-type collector layer 5 in the central part, an emitter diffusion layer 11 on one side end, and a collector diffusion layer 15 on the other end side. An intrinsic base electrode 9 is formed between the n-type collector layer 5 and emitter diffusion layer 11. An oxide film 4 is formed as to cover them, an oxide film 8 is formed on the surface of the horizontal part, and an oxide film 12 is formed over the exposed part. An opening is provided on the base areas of the oxide films 4, 8 and 12, and a p-type single crystal silicon layer 13 and a p-type impurity layer 14 are successively formed as a base leading electrode. The p-type single crystal silicon layer 13 is connected electrically with the intrinsic base area 9.
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