发明名称 |
Conductive material adhesion enhancement in damascene process for semiconductors |
摘要 |
A method for manufacturing an integrated circuit using damascene processes is provided in which dielectric surfaces subject to chemical-mechanical polishing are roughened after polishing to increase the surface area to provide more surface for chemical and mechanical bonding of subsequent layers.
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申请公布号 |
US6107185(A) |
申请公布日期 |
2000.08.22 |
申请号 |
US19990302036 |
申请日期 |
1999.04.29 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
LUKANC, TODD P. |
分类号 |
H01L21/768;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/768 |
代理机构 |
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主权项 |
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地址 |
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