发明名称 Conductive material adhesion enhancement in damascene process for semiconductors
摘要 A method for manufacturing an integrated circuit using damascene processes is provided in which dielectric surfaces subject to chemical-mechanical polishing are roughened after polishing to increase the surface area to provide more surface for chemical and mechanical bonding of subsequent layers.
申请公布号 US6107185(A) 申请公布日期 2000.08.22
申请号 US19990302036 申请日期 1999.04.29
申请人 ADVANCED MICRO DEVICES, INC. 发明人 LUKANC, TODD P.
分类号 H01L21/768;(IPC1-7):H01L21/00 主分类号 H01L21/768
代理机构 代理人
主权项
地址