| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser device which is capable of oscillating laser rays which are electrically and optically stable even if it operates in a higher order oscillation mode. SOLUTION: A nitride semiconductor laser device has a structure where a first N-type AlxGa1-xN clad layer 13 which is smaller in refractive index than an N-type contact layer 12, possessed of an energy gap larger than an active layer by 0.4 eV to trap electrons in the active layer, an N-type AlyGa1-yN first mode fluctuation restraining layer 14 which takes in light generated by an active layer partially and restricts the generated light that is taken in so as to restrains an oscillation mode from fluctuating, and a second clad layer 15 of the same N-type AlxGa1-xN with the first N-type clad layer 13 are successively formed on a sapphire substrate 11, where the Al mixed crystal ratio x of the N-type clad layers 13 and 15 and the Al mixed crystal ratio y of the mode fluctuation restraining layer 14 are so set as to satisfy a formula, 0<=y<x. |
