| 摘要 |
PROBLEM TO BE SOLVED: To allow the generation of such a defect as to penetrate a single crystal film on a substrate and to improve the light-emission characteristic by a method wherein a buried part consisting of the same material as the material for a burrier layer encircling a through dislocation is provided in an active layer. SOLUTION: In an active layer 6, having as a main constituent InGaN which is constituted of a well layer 62 and a barrier layer 61, is formed into a multiple quantum well structure, a buried part 51 consisting of the same material as the material for a burrier layer 7, which encircles a through dislocation 15 extending from a lower guide layer 5 consisting of an N-type GaN layer to an upper guide layer 8 consisting of a P-type GaN layer, is demarcated by an interface 50 extending to the periphery of the dislocation 15 and consists of a P-type Al0.2Ga0.8N layer, is provided. By this constitution, as the periphery of the dislocation 15 is covered with the buried part 51 consisting of the AlGaN layer having a large band gap, both electrons 16 and holes 17 cannot reach the dislocation 15. Accordingly, the luminous efficiency of a semiconductor nitride light-emitting element is increased in comparison with one having no buried part 51. |
