| 摘要 |
PROBLEM TO BE SOLVED: To provide the growth method of a nitride semiconductor film which reduces the dislocation of a crystal defect in a window part without limiting to the dislocation of a crystal defect in the upper part of a protective film, and does not generate voids between GaN films at the time of a bonding of the fellow GaN films adjacent to each other on the upper part of the protective film, and a nitride semiconductor element which uses the nitride semiconductor film obtained by the above method as a substrate, excellent in element performance, such as life characteristics, and is excellent in mass productivity. SOLUTION: The growth method of a nitride semiconductor film has at least a first process for partially forming a first protective film 3 consisting of a material hard to perform the growth of the nitride semiconductor film on a substrate; and a second process for growing a first nitride semiconductor film 5 on the film 3 formed after this first process up to the upper part of the film 3, while the lateral growth of the semiconductor film 5 is utilized as the growth method of the nitride semiconductor film. At the time of the growth of the film 5 in the second process, P-type impurities or P-type impurities and N-type impurities are doped to the film 5. The nitride semiconductor film 5 obtained by the above method as an element is used as the substrate and an element structure is formed on this substrate. |
