| 摘要 |
PROBLEM TO BE SOLVED: To realize satisfactory removal and re-electrodeposition of a glass passivation film comprising mainly ZnO, and to improve yield. SOLUTION: A silicon oxide film 5 and a glass passivation film 8, comprising mainly ZnO which has the composition of ZnO-B2O3-SiO2 and embeds a mesa groove 6 are formed on a substrate 1. Only the glass passivation film 8 is selectively removed from the substrate 1 with an etchant. In this case, an aqueous solution containing 10% citric acid and 0.1% to 1.0% nitric acid, and moreover, the substrate is impregnated for several minutes to several tens of minutes, corresponding to the thickness of film maintaining the temperature of the etchant at 60 deg.C to 100 deg.C.
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