| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor photodevice, which can raise the sensitivity of the photodevice. SOLUTION: A photodevice 1 is constituted of a base body 2, a light-receiving part 3, a passivation film 4 and two electrodes 5 and 6. The base body 2 is constituted of a substrate 11, and an epitaxial layer 12 which both consist of an N-type single crystal silicon film. The layer 12 is formed on the surface of the substrate 11. The light-receiving part 3 consists of a P-type single crystal silicon film, and is constituted of a buried layer 13 buried between the substrate 11 and the layer 12, and a diffused layer 14 which is exposed on the surface of the layer 12 and at the same time is formed in such a way as to communicate with the layer 13. The film 4 consisting of an insulating film is formed on the surface of the layer 12. The electrode 5 is formed on the place which corresponds to the above layer 14 in the film 4. Moreover, the electrode 6 is bonded to the rear of the substrate 11.
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