TEMPERATURE MEASURING METHOD, PREPARATION OF SAMPLE FOR TEMPERATURE MEASUREMENT AND FABRICATION OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for measuring the temperature and the temperature distribution in a chamber with high accuracy, and a method for preparing a sample suitable for temperature measurement. SOLUTION: When As is implanted into a silicon substrate 10 having a native oxide film 11, an amorphous region 10a is formed and the amorphous region 10a is divided into a high concentration oxygen region 10aa having oxygen concentration of critical level or above, and a low concentration oxygen region 10ab having oxygen concentration lower than the critical level. When oxygen ions are implanted subsequently, the high concentration oxygen region 10aa is spread entirely over the amorphous region. Recovery rate is then determined utilizing decrease in the thickness of the amorphous region when annealing is performed. Furthermore, anneal temperature is determined utilizing the relation between the anneal temperature and the recovery rate. The recovery rate can be set at a substantially constant small value by regulating the oxygen concentration in the amorphous region above the critical level resulting in the enhancement of accuracy and reliability of temperature measurement.